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Synthesis and characterization of La1.5+xSr0.5xCo0.5Ni0.5O4 (x = 0, 0.2)

Identifieur interne : 000F15 ( Main/Exploration ); précédent : 000F14; suivant : 000F16

Synthesis and characterization of La1.5+xSr0.5xCo0.5Ni0.5O4 (x = 0, 0.2)

Auteurs : H. El Shinawi [Royaume-Uni] ; C. Greaves [Royaume-Uni]

Source :

RBID : ISTEX:C355CC91CB487FFE9A32D3EFA440040CB0C2D1E5

English descriptors

Abstract

The K2NiF4 phases La1.5+xSr0.5xCo0.5Ni0.5O4(+) (x = 0, 0.2) have been prepared by solid state reactions and structurally characterized by X-ray and neutron powder diffraction. The reduction behaviour, the magnetic properties and the electronic properties of these materials have also been examined. Oxygen hyperstoichiometry has been achieved in the lanthanum-rich phase La1.7Sr0.3Co0.5Ni0.5O4.08 with retention of the tetragonal symmetry. The excess oxygen occupies the ideal interstitial (0, 0.5, 0.25) sites of the tetragonal structure. The materials withstand reducing conditions (10% H2N2) up to 800 C via reduction of the B-site oxidation state to the divalent state (Ni2+/Co2+) and formation of oxide-ion vacancies within the equatorial planes of the structure. Formation of Ni1+ in these materials under reducing conditions is suggested to account for the oxygen stoichiometry and the magnetic behaviour of La1.5Sr0.5Co0.5Ni0.5O3.70. The electrical conductivity of the oxygen-rich semiconductor materials reaches a SOFC applicable limit (>100 S cm1) at elevated temperatures.

Url:
DOI: 10.1039/b913792k


Affiliations:


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<term>Axial oxygen</term>
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<term>Cathode behaviour</term>
<term>Chem</term>
<term>Conventional perovskites</term>
<term>Coordination number</term>
<term>Coordination sphere</term>
<term>Crystal structure</term>
<term>Divalent state</term>
<term>Equatorial</term>
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<term>Excess oxygen</term>
<term>Good agreement</term>
<term>Higher activation energies</term>
<term>Higher displacement</term>
<term>Higher energy side</term>
<term>Hyperstoichiometry</term>
<term>Ideal site</term>
<term>Interstitial</term>
<term>Interstitial oxygen</term>
<term>Lattice parameters</term>
<term>Magnetic order</term>
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<term>Mater</term>
<term>Neutron powder diffraction</term>
<term>Overall stoichiometries</term>
<term>Oxidation state</term>
<term>Oxidizing conditions</term>
<term>Oxygen hyperstoichiometry</term>
<term>Oxygen stoichiometry</term>
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<term>Reduction behaviour</term>
<term>Resistivity</term>
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<term>Room temperature</term>
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<term>Semiconductive behaviour</term>
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<term>Temperature range</term>
<term>Tetragonal structure</term>
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<term>Thermal activation energy</term>
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<div type="abstract">The K2NiF4 phases La1.5+xSr0.5xCo0.5Ni0.5O4(+) (x = 0, 0.2) have been prepared by solid state reactions and structurally characterized by X-ray and neutron powder diffraction. The reduction behaviour, the magnetic properties and the electronic properties of these materials have also been examined. Oxygen hyperstoichiometry has been achieved in the lanthanum-rich phase La1.7Sr0.3Co0.5Ni0.5O4.08 with retention of the tetragonal symmetry. The excess oxygen occupies the ideal interstitial (0, 0.5, 0.25) sites of the tetragonal structure. The materials withstand reducing conditions (10% H2N2) up to 800 C via reduction of the B-site oxidation state to the divalent state (Ni2+/Co2+) and formation of oxide-ion vacancies within the equatorial planes of the structure. Formation of Ni1+ in these materials under reducing conditions is suggested to account for the oxygen stoichiometry and the magnetic behaviour of La1.5Sr0.5Co0.5Ni0.5O3.70. The electrical conductivity of the oxygen-rich semiconductor materials reaches a SOFC applicable limit (>100 S cm1) at elevated temperatures.</div>
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